Switching circuit and semicondcutor device

ABSTRACT

An RF switching circuit according to the present invention includes: a plurality of input/output terminals for inputting and outputting an RF signal; and a switch for opening and closing an electrical connection between the input/output terminals. The switch is constituted by a multi-gate field effect transistor including a plurality of gates located between source and drain spaced from each other on a semiconductor layer. A bias voltage is applied to an inter-gate region of the semiconductor layer between the gates. The bias voltage is equal to or lower than 90% of a high-level voltage, which is a voltage for turning the multi-gate field effect transistor ON, in a state where the multi-gate field effect transistor is ON, and is equal to or higher than 80% of the high-level voltage and equal to or lower than the high-level voltage in a state where the multi-gate field effect transistor is OFF.

CROSS-REFERENCE TO RELATED APPLICATION

The disclosure of Japanese Patent Application No. 2004-161222 filed onMay 31, 2004 including specification, drawings and claims isincorporated herein by reference in its entirety.

BACKGROUND OF THE INVENTION

The present invention relates to switching circuits and semiconductordevices for switching signals in, for example, mobile communicationequipment.

In recent mobile communication systems typified by cellular phones,expectations for radio-frequency (RF) switches with high performanceusing field effect transistors (FETs) have been growing. However, the RFswitches using FETs have a drawback in which their RF characteristicsdeteriorate at the input of high power. To eliminate this drawback, atechnique of connecting a plurality of FETs in series has been adopted.In addition, to reduce the size and cost of a semiconductor chip, atechnique of using a multi-gate FET including a plurality of gateelectrodes between a drain electrode and a source electrode is proposedinstead of the technique of connecting a plurality of FETs in series.

Now, a conventional method for improving RF characteristics of an RFswitching circuit using a multi-gate FET will be described withreference to the drawings (see Japanese Unexamined Patent Publication(Kokai) No. 2000-183362).

FIG. 17 illustrates a layout of a switching circuit constituted by adual gate FET on a semiconductor substrate according to a conventionalexample. FIGS. 18A and 18B illustrate cross-sectional structures takenalong the lines XVIIIa-XVIIIa and XVIIIb-XVIIIb, respectively, in FIG.17.

As shown in FIG. 17, two ohmic electrodes 4A and 4B are formed andspaced from each other on an active layer 3 provided on a semiconductorsubstrate 2. Two gates 5A and 5B as Shottkey electrodes are formedbetween the ohmic electrodes 4A and 4B. The gates 5A and 5B areconnected to respective gate pads 6. An inter-gate region 3A, which isthe region between the gates 5A and 5B on the active layer 3, isconnected to the ohmic electrode 4A via a connection pattern 7.

Now, it will be described how the switching circuit of the conventionalexample operates. Suppose a high-level voltage for turning the FET ON is3 V, which is equal to a power supply voltage, and a low-level voltagefor turning the FET OFF is 0 V, which is equal to a ground voltage.Then, when 3V is applied to the ohmic electrodes 4A and 4B and 0 V isapplied to the gates 5A and 5B by way of the gate pads 6, depletionlayers 8 a are formed in parts of the active layer 3 under therespective gates 5A and 5B as shown in FIG. 18A. Accordingly, channel isclosed, so that the FET is turned OFF.

In the switching circuit shown in FIG. 17, a direct-current (DC)potential at the inter-gate region 3A between the gates 5A and 5B issubstantially equal to a DC potential at the ohmic electrode 4A by theconnection pattern 7. Accordingly, the gates 5A and 5B are reversebiased, so that the depletion layers 8 a more readily expand than in acase where the connection pattern 7 is not provided. At this time,depletion-layer capacitances C11 a through C14 a are the same. As aresult, isolation to an RF signal between the ohmic electrodes 4A and 4Bis enhanced.

However, a voltage applied to the ohmic electrodes during actualoperation of the FET is not equal to the power supply voltage and isapproximately 90% of the power supply voltage because of the influenceof a voltage drop. In addition, the resistance value of the inter-gateregion 3A is larger than that of the ohmic electrode 4A by about twoorders of magnitude. Accordingly, the gates of the FET in the OFF stateare not sufficiently reverse biased at the line XVIIIb-XVIIIb apart fromthe connection pattern 7, so that insufficient depletion layers 8 b areformed as shown in FIG. 18B. This makes the depletion-layer capacitancesC11 b and C14 b smaller than the depletion-layer capacitances C12 b andC13 b. As a result, the isolation to an RF signal becomes insufficient.

In a case where the depletion layers formed in regions under the gatesexpand insufficiently, the OFF state of the RF switching circuit is notmaintained when a relatively-low signal is input, so that waveformdistortion occurs. As a result, there arises a problem in which thiswaveform distortion increases harmonic distortion.

On the other hand, in a case where a bias voltage is directly applied tothe ohmic electrodes and the potentials at the ohmic electrodes arefixed at the power supply voltage, the gates are sufficiently reversebiased in the OFF state where the ground voltage is applied to thegates. In this case, however, in the ON state where the power supplyvoltage is applied to the gates, the potential difference between eachof the gates and the source is 0 V and an insufficient forward biasvoltage is generated. Accordingly, there arises another problem of alarge insertion loss in this ON state.

SUMMARY OF THE INVENTION

It is therefore an object of the present invention to provide aswitching circuit in which deterioration of isolation and increase ofharmonic distortion with respect to an RF signal are prevented and theinsertion loss in an ON state is small even with the use of a multi-gateFET.

In order to achieve this object, according to the present invention, anRF switching circuit with a multi-gate FET has a configuration in whicha bias voltage at a level different from a voltage applied to gates ofthe multi-gate FET is applied to a region between the gates on asemiconductor layer.

Specifically, a first RF switching circuit according to the presentinvention is an RF switching circuit including: a plurality ofinput/output terminals for inputting and outputting an RF signal; and aswitch for opening and closing an electrical connection between theinput/output terminals. The switch is constituted by a multi-gate fieldeffect transistor including a plurality of gates located between sourceand drain spaced from each other on a semiconductor layer. A biasvoltage is applied to an inter-gate region of the semiconductor layerbetween the gates. The bias voltage is equal to or lower than 90% of ahigh-level voltage, which is a voltage for turning the multi-gate fieldeffect transistor ON, in a state where the multi-gate field effecttransistor is ON, and is equal to or higher than 80% of the high-levelvoltage and equal to or lower than the high-level voltage in a statewhere the multi-gate field effect transistor is OFF.

In the first RF switching circuit, the gates are sufficiently reversebiased, so that sufficient depletion layers are formed in regions of thesemiconductor layer under the respective gates. Accordingly, straycapacitances between the gates and the drain and between the gates andthe source are sufficiently reduced and made uniform. As a result, an RFswitching circuit exhibiting enhanced isolation and low harmonicdistortion is achieved. On the other hand, when the transistor is ON, avoltage applied to the inter-gate region of the transistor is equal toor lower than 90% of the high-level voltage, so that a sufficientpotential difference between the gates and the inter-gate region isobtained. Accordingly, the gates are forward biased, and the ONresistance is reduced.

In the first RF switching circuit, the number of said input/outputterminals is preferably three. The RF switching circuit is preferably anSPDT RF switching circuit including two said multi-gate field effecttransistors each connected between each two of the input/outputterminals. A control line connected between the gates of one of themulti-gate field effect transistors and the inter-gate regions of theother multi-gate field effect transistor is preferably further provided.

This configuration ensures application of a bias voltage to theinter-gate region.

The first RF switching circuit may further include a diode providedbetween the control line and the inter-gate region, the diode having acathode connected to the inter-gate region.

With this configuration, a forward current flowing in the gates isreduced, so that a high performance RF switching circuit with low powerconsumption is achieved.

Alternatively, the number of said input/output terminals may be three,the RF switching circuit may be an SPDT RF switching circuit includingtwo said multi-gate field effect transistors each connected between eachtwo of the input/output terminals, and the inter-gate region of one ofthe multi-gate field effect transistors may be connected to theinter-gate region of the other multi-gate field effect transistor. Withthis configuration, a high-performance RF switching circuit having asimple configuration is achieved.

A second RF switching circuit according to the present invention is anRF switching circuit including: a plurality of input/output terminalsfor inputting and outputting an RF signal; and a switch for opening andclosing an electrical connection between the input/output terminals. Theswitch is constituted by a multi-gate field effect transistor includinga plurality of gates located between source and drain spaced from eachother on a semiconductor layer. The multi-gate field effect transistorhas a biasing gate used for applying a bias voltage and provided betweenthe gates.

In the second RF switching circuit, the multi-gate field effecttransistor constituting the RF switching circuit includes a biasing gatefor applying a bias voltage to a part of the semiconductor layer betweenthe gates. When a bias voltage is applied to the biasing gate, the gatesare sufficiently reverse biased. This allows depletion layers tosufficiently expand in regions of the semiconductor layer under therespective gates, so that stray capacitances between the gates and thedrain and between the gates and the source are sufficiently reduced andmade uniform. As a result, an RF switching circuit exhibiting enhancedisolation and low harmonic distortion is achieved.

In the second RF switching circuit, a voltage equal to or higher than80% of a high-level voltage for turning the multi-gate field effecttransistor ON and equal to or lower than the high-level voltage ispreferably applied to the biasing gate. This configuration ensures thatthe gates are reverse biased when the RF switching circuit is OFF, sothat isolation is enhanced.

In this case, a voltage equal to or lower than 90% of the high-levelvoltage is preferably applied to the biasing gate. With thisconfiguration, isolation is enhanced when the RF switch circuit is OFFand the ON resistance is reduced in the ON state as compared to a casewhere a high-level voltage is applied.

In the second RF switching circuit, the number of said input/outputterminals is preferably three. The RF switching circuit is preferably anSPDT RF switching circuit including two said multi-gate field effecttransistors each connected between each two of the input/outputterminals. A biasing line connecting the biasing gates of the multi-gatefield effect transistors together is preferably further provided. Thisconfiguration ensures application of a bias voltage to the biasing gate.

The second RF switching circuit preferably further includes two shuntcircuits each for causing one of the input/output terminals connected toone of the multi-gate field effect transistors to be grounded withrespect to an RF signal. Each of the shunt circuits is preferablyconnected between one of the input/output terminals and a ground andconstituted by a multi-gate field effect transistor including a biasinggate. The multi-gate field effect transistor constituting each of theshunt circuits is preferably connected to the biasing line. With thisconfiguration, the input/output terminals are grounded with respect toan RF signal, so that isolation of the RF switching circuit is furtherenhanced.

A voltage equal to the high-level voltage is preferably applied to thebiasing line. This configuration ensures that the gates of themulti-gate field effect transistor in an OFF state are reverse biased.

The biasing line may be connected to the input/output terminalsconnected to the respective multi-gate field effect transistors. Thisconfiguration ensures application of a bias voltage without the need ofan additional power supply circuit.

The biasing line is preferably provided with a level shift circuit forgenerating a voltage equal to or higher than 80% and equal to or lowerthan 90% of the high-level voltage. With this configuration, the gatesof the multi-gate field effect transistor are forward biased in an ONstate and the gates are reverse biased in an OFF state.

In this case, the level shift circuit preferably includes: two levelshift diodes each having an anode connected to one of a pair of controllines for controlling the gates of the multi-gate field effecttransistors and a cathode connected to the biasing line; and two biasvoltage adjusting resistors each having two terminals, one of theterminals is connected to an associated one of the control lines and theother terminal is connected to the biasing line.

In the first and second RF switching circuits of the present invention,the high-level voltage is preferably a power supply voltage.

A semiconductor device according to the present invention ischaracterized in that an RF switching circuit according to the presentinvention is integrated on a semiconductor substrate.

In the semiconductor device of the present invention, an RF switchingcircuit exhibiting excellent isolation and low harmonic distortion isintegrated on a semiconductor substrate, so that a high-performancesemiconductor device for an RF signal having a small size is achieved.

In the semiconductor device of the present invention, an RF amplifierfor amplifying RF power is preferably further provided. With thisconfiguration, a loss at a connection part is reduced, so that asemiconductor device for an RF signal with low power consumption and asmall size is achieved.

In a switching circuit and a semiconductor device according to thepresent invention, even with the use of a multi-gate field effecttransistor, degradation of isolation and increase of harmonic distortionwith respect to an RF signal do not occur and, in addition, an RFswitching circuit with a small insertion loss in an ON state isachieved.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a circuit diagram illustrating an RF switching circuitaccording to a first embodiment of the present invention.

FIG. 2 is a plan view illustrating a semiconductor substrate on whichthe RF switching circuit of the first embodiment is integrated.

FIGS. 3A and 3B illustrate a semiconductor substrate on which the RFswitching circuit of the first embodiment is integrated. FIG. 3A is across-sectional view taken along the line IIIa-IIIa in FIG. 2. FIG. 3Bis a cross-sectional view taken along the line IIIb-IIIb in FIG. 2.

FIG. 4 is a graph showing a correlation between input power and harmonicdistortion of the RF switching circuit of the first embodiment.

FIG. 5 is a graph showing variations of harmonic distortion andinsertion loss with a varying voltage applied to inter-gate regions ofthe RF switching circuit of the first embodiment.

FIG. 6 is a circuit diagram illustrating an RF switching circuitaccording to a first modified example of the first embodiment.

FIG. 7 is a circuit diagram illustrating an RF switching circuitaccording to a second modified example of the first embodiment.

FIG. 8 is a circuit diagram illustrating an RF switching circuitaccording to a second embodiment of the present invention.

FIG. 9 is a plan view illustrating a semiconductor substrate on whichthe RF switching circuit of the second embodiment is integrated;

FIGS. 10A and 10B illustrate a cross-section taken along the line X-X inFIG. 9. FIG. 10A is a cross-sectional view illustrating an OFF state ofa transistor. FIG. 10B is a cross-sectional view illustrating an ONstate of the transistor.

FIG. 11 is a circuit diagram illustrating an RF switching circuitaccording to a first modified example of the second embodiment.

FIG. 12 is a circuit diagram illustrating an RF switching circuitaccording to a second modified example of the second embodiment.

FIG. 13 is a plan view illustrating a semiconductor substrate on whichthe RF switching circuit of the second modified example of the secondembodiment is integrated.

FIGS. 14A and 14B illustrate a cross-section taken along the lineXIV-XIV in FIG. 13. FIG. 14A is a cross-sectional view illustrating anOFF state of a transistor. FIG. 14B is a cross-sectional viewillustrating an ON state of the transistor.

FIG. 15 is a circuit diagram illustrating an RF switching circuitaccording to a third embodiment of the present invention.

FIG. 16 is block diagram illustrating a semiconductor device accordingto a fourth embodiment of the present invention.

FIG. 17 is a plan view illustrating a semiconductor substrate on whichan RF switching circuit according to a conventional example isintegrated.

FIGS. 18A and 18B illustrate a semiconductor substrate on which the RFswitching circuit of the conventional example is integrated. FIG. 18A isa cross-sectional view taken along the line XVIIIa-XVIIIa in FIG. 17.FIG. 18B is a cross-sectional view taken along the line XVIIIb-XVIIIb inFIG. 17.

DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiment 1

A first embodiment of the present invention will be described withreference to the drawings. FIG. 1 illustrates an equivalent circuit ofan RF switching circuit according to the first embodiment. As shown inFIG. 1, a first FET 101, which is a multi-gate field effect transistor(FET) having three gates, is connected between a first input/outputterminal 501 and a second input/output terminal 502. A second FET 102,which is also a multi-gate FET having three gates, is connected betweenthe first input/output terminal 501 and a third input/output terminal503. In this manner, a single pole double throw (SPDT) RF switchingcircuit is configured.

The first FET 101 has a first gate 51A, a second gate 51B and a thirdgate 51C that are connected to a first control line 701 via respectiveresistors 201. The second FET 102 has a first gate 52A, a second gate52B and a third gate 52C that are connected to a second control line 702via respective resistors 201.

On the other hand, the first FET 101 includes an inter-gate region 401Aand an inter-gate region 401B that are connected to the second controlline 702 via respective resistors 202. The second FET 102 includes aninter-gate region 402A and an inter-gate region 402B that are connectedto the first control line 701 via respective resistors 202. The firstcontrol line 701 and the second control line 702 are connected to afirst control terminal 601 and a second control terminal 602,respectively.

Now, a semiconductor device according to this embodiment in which the RFswitching circuit is integrated will be described. FIG. 2 is a plan viewillustrating a configuration of a semiconductor substrate on which theRF switching circuit of this embodiment is integrated.

As shown in FIG. 2, the first input/output terminal 501, the secondinput/output terminal 502 and the third input/output terminal 503 areformed on a semiconductor substrate 90: A first active layer 21 that isa rectangular in the plan view is formed in part of the semiconductorsubstrate 90 between the first input/output terminal 501 and the secondinput/output terminal 502. A second active layer 22 that is arectangular in the plan view is formed in part of the semiconductorsubstrate 90 between the first input/output terminal 501 and the thirdinput/output terminal 503.

The first through third gates 51A through 51C are formed at regularintervals on a middle portion of the first active layer 21 along thelength direction. A source 31 and a drain 41 are respectively formed atboth sides of the first active layer 21 along the length direction. Inthis manner, the first FET 101 is formed. In the same manner, the secondFET 102 is formed on the second active layer 22.

The first FET 101 has the drain 41 connected to the first input/outputterminal 501 via a metal interconnect 50A and the source 31 connected tothe second input/output terminal 502 via a metal interconnect 50B. Onthe other hand, the second FET 102 has a drain 42 connected to the firstinput/output terminal 501 via the metal interconnect 50A and a source 32connected to the third input/output terminal 503 via the metalinterconnect 50B.

The first through third gates 51A through 51C are connected to the firstcontrol line 701, which is a metal interconnect, via the respectiveresistors 201. The inter-gate region 402A and the inter-gate region 402Bof the second FET 102 are connected to the first control line 701 viathe respective resistors 202. The first control line 701 is connected tothe first control terminal 601.

In the same manner, the first through third gates 52A through 52C of thesecond FET 102 and the inter-gate regions 401A and 401B of the first FET101 are connected to the second control line 702, which is connected tothe second control terminal 602.

FIGS. 3A and 3B illustrate cross-sectional structures taken along thelines IIIa-IIIa and IIIb-IIIb, respectively, in FIG. 2. As shown inFIGS. 3A and 3B, the second FET 102 has a structure in which a bufferlayer 14, the active layer 22 and a non-doped layer 12 are stacked inthis order on the semiconductor substrate 90 and a cap layer 13 isformed on the non-doped layer 12. The cap layer 13 has equally-spacedopenings in each of which the non-doped layer 12 is exposed. The firstthrough third gates 52A through 52C as Shottkey electrodes are formed inthe respective openings.

Now, it will be described how the RF switching circuit of thisembodiment operates in a case where an RF signal input to the secondinput/output terminal 502 is output from the first input/output terminal501. In this embodiment, it is assumed that a high-level voltage appliedto the gates to turn the first and second FETs 101 and 102 ON is 3 V,which is equal to a power supply voltage, and a low-level voltageapplied to the gates to turn these FETs OFF is 0 V, which is equal to aground voltage.

In the case where a signal input to the second input/output terminal 502is output from the first input/output terminal 501, 3 V is applied tothe first control terminal 601 and 0 V is applied to the second controlterminal 602. In this manner, 3 V is applied to the first through thirdgates 51A through 51C of the first FET 101, so that the first FET 101 isturned ON. On the other hand, 0 V is applied to the first through thirdgates 52A through 52C of the second FET 102, so that the second FET 102is turned OFF.

Since 0 V is also applied to the inter-gate regions 401A and 401B of thefirst FET 101 in the ON state, the first through third gates 51A through51C of the first FET 101 are sufficiently forward biased, so that the ONresistance decreases and the insertion loss is reduced.

On the other hand, since 3 V is also applied to the inter-gate regions402A and 402B of the second FET 102 in the OFF state, the first throughthird gates 52A through 52C of the second FET 102 are sufficientlyreverse biased. Accordingly, as shown in FIGS. 3A and 3B, depletionlayers 18 a are sufficiently formed in the entire regions under therespective first through third gates 52A through 52C of the second FET102 in the active layer 22. This substantially equalizes thedepletion-layer capacitances C1 a through C6 a and C1 b through C6 b, sothat an RF voltage applied to the second FET 102 in the OFF state isequally divided by the depletion-layer capacitances. As a result,isolation between the first input/output terminal 501 and the thirdinput/output terminal 503 is enhanced and harmonic distortion isreduced.

FIG. 4 is a graph showing a relationship between input power andharmonic distortion. In FIG. 4, the abscissa indicates the input powervalue (dBm) and the ordinate indicates the harmonic distortion (dBm). Asshown in FIG. 4, in the case of the RF switching circuit of thisembodiment indicated by the solid curve, the input power valuecorresponding to a general standard value of harmonic distortion of −30dBm is improved by about 2 dBm, as compared to an RF switching circuitaccording to a conventional example indicated by the dashed curve.

FIG. 5 shows a variation of the harmonic distortion and a variation ofthe insertion loss with a varying bias voltage applied to inter-gateregions. In FIG. 5, the abscissa indicates the ratio (%) of a biasvoltage applied to the inter-gate regions of the FET in an OFF statewith respect to a high-level voltage applied to the gates in an ONstate. The left-side ordinate indicates the harmonic distortion (dBm)and the right-side ordinate indicates the insertion loss (dB). In FIG.5, the harmonic distortion indicated by the solid curve increases as thebias voltage decreases, and does not satisfy −30 dBm, which is a generalstandard value, when the bias voltage is less than 80% of the high-levelvoltage. This is because the bias voltage is too low to apply asufficient reverse bias, so that depletion layers do not expandsufficiently.

On the other hand, the insertion loss indicated by the dashed curverapidly increases and exceeds −0.5 dB, which is a general standardvalue, when the bias voltage exceeds 90% of the high-level voltage. Thisis because the bias voltage is too high to apply a sufficient forwardbias.

Accordingly, to enhance isolation by applying a sufficient reverse biasto the gates of the FET in an OFF state and to reduce the insertion lossby applying a forward bias to the gates of the FET in an ON state, it ispreferable to apply a voltage equal to or higher than 80% of thehigh-level voltage when the FET is OFF and apply a voltage equal to orlower than 90% of the high-level voltage when the FET is ON.

In the RF switching circuit of this embodiment, the high-level voltageis applied to inter-gate regions when the FET is OFF whereas thelow-level voltage is applied to the inter-gate regions when the FET isON. Accordingly, a sufficient reverse bias is uniformly applied to thegates of the FET in the OFF state, so that the isolation is enhanced andthe harmonic distortion is reduced. In addition, since a forward bias isapplied to the gates of the FET in the ON state, the insertion loss isreduced and the harmonic distortion in the case of receiving a highpower signal as the whole RI switching circuit is reduced.

Modified Example 1 of Embodiment 1

Hereinafter, a first modified example of the first embodiment will bedescribed with reference to the drawings. FIG. 6 illustrates anequivalent circuit of an RF switching circuit according to this modifiedexample. In FIG. 6, components already shown in FIG. 1 are denoted bythe same reference numerals, and thus descriptions thereof will beomitted.

As shown in FIG. 6, in the RF switching circuit of this modifiedexample, inter-gate regions 401A and 401B of a first FET 101 areconnected to the cathodes of respective diodes 141 whose anodes areconnected to a second control line 702 via respective resistors 202. Inthe same manner, inter-gate regions 402A and 402B of a second FET 102are connected to the cathodes of respective diodes 141 whose anodes areconnected to a first control line 701 via respective resistors 202.

In this modified example, when 0 V is applied to a second controlterminal 602, for example, a forward current flowing from a first gate51A to a third gate 51C of the first FET 101 is reduced because thecathodes of the diodes 141 are connected to the inter-gate regions 401Aand 401B.

Accordingly, in addition to the reduction of the harmonic distortion andenhancement of the isolation, power consumption is reduced in thismodified example.

Modified Example 2 of Embodiment 1

Hereinafter, a second modified example of the first embodiment will bedescribed with reference to FIG. 7. FIG. 7 illustrates an equivalentcircuit of an RF switching circuit according to this modified example.In FIG. 7, components already shown in FIG. 1 are denoted by the samereference numerals, and thus descriptions thereof will be omitted.

As shown in FIG. 7, in the RF switching circuit of this modifiedexample, inter-gate regions 401A and 401B of a first FET 101 areconnected to inter-gate regions 402A and 402B of a second FET 102 viaresistors 202.

In the RF switching circuit of this modified example, in a case where anRF signal input to a second input/output terminal 502 is output from afirst input/output terminal 501, for example, when the first FET 101 isturned ON and the second FET 102 is turned OFF, the potentials at theinter-gate regions 401A and 401B of the first FET 101 are increased bythe applied RF signal. Accordingly, the potentials at the inter-gateregions 402A and 402B of the second FET 102 connected to the inter-gateregions 401A and the 401B of the first FET 101 via the resistors 202 arealso increased. As a result, first through third gates 52A through 52Cof the second FET 102 are reverse biased, so that the harmonicdistortion is reduced and the isolation is enhanced. In addition, thecircuit configuration is simplified, thus enabling reduction of the chipsize.

Embodiment 2

A second embodiment of the present invention will be described withreference to the drawings. FIG. 8 illustrates an equivalent circuit ofan RF switching circuit according to the second embodiment. As shown inFIG. 8, a first FET 101 having three gates and two biasing gates isconnected between a first input/output terminal 501 and a secondinput/output terminal 502. A second FET 102 also having three gates andtwo biasing gates is connected between the first input/output terminal501 and a third input/output terminal 503. In this manner, an SPDT RFswitching circuit is configured.

The first FET 101 has a first gate 51A, a second gate 51B and a thirdgate 51C that are connected to a first control line 701 via respectiveresistors 201. The first control line 701 is connected to a firstcontrol terminal 601. In the same manner, the second FET 102 has a firstgate 52A, a second gate 52B and a third gate 52C that are connected to asecond control line 702 via respective resistors 201. The second controlline 702 is connected to a second control terminal 602.

On the other hand, a first biasing gate 61A and a second biasing gate61B of the first FET 101 and a first biasing gate 62A and a secondbiasing gate 62B of the second FET 102 are connected to a biasing line703 via respective resistors 202. The biasing line 703 is connected to abiasing terminal 603.

Now, a semiconductor device according to this embodiment in which the RFswitching circuit is integrated will be described. FIG. 9 is a plan viewillustrating a configuration of a semiconductor substrate on which theRF switching circuit of this embodiment is integrated.

As shown in FIG. 9, the first through third input/output terminals 501through 503 and the first and second control terminals 601 and 602 andthe biasing terminal 603 are formed on a semiconductor substrate 90. Afirst active layer 21 that is a rectangular in the plan view is formedin part of the semiconductor substrate 90 between the first input/outputterminal 501 and the second input/output terminal 502. A second activelayer 22 that is a rectangular in the plan view is formed in part of thesemiconductor substrate 90 between the first input/output terminal 501and the third input/output terminal 503.

The first through third gates 51A through 51C are formed at regularintervals on a middle portion of the first active layer 21 along thelength direction. A source 31 and a drain 41 are respectively formed atboth sides of the first active layer 21 along the length direction. Thefirst biasing gate 61A and the second biasing gate 61B are formedbetween the first and second gates 51A and 51B and between the secondand third gates 51B and 51C, respectively. In this manner, the first FET101 is configured. In the same manner, the second FET 102 is formed onthe second active layer 22.

The first FET 101 has the drain 41 connected to the first input/outputterminal 501 via a metal interconnect 50A and the source 31 connected tothe second input/output terminal 502 via a metal interconnect 50B. Onthe other hand, the second FET 102 has a drain 42 connected to the firstinput/output terminal 501 via the metal interconnect 50A and a source 32connected to the third input/output terminal 503 via the metalinterconnect 50B.

The first through third gates 51A through 51C are connected to the firstcontrol line 701, which is a metal interconnect, via the respectiveresistors 201. The first control line 701 is connected to the firstcontrol terminal 601.

In the same manner, the first through third gates 52A through 52C of thesecond FET 102 are connected to the second control line 702 via theresistors 201, and the second control line 702 is connected to thesecond control terminal 602.

The first biasing gate 61A and the second biasing gate 61B of the firstFET 101 and the first biasing gate 62A and the second biasing gate 62Bof the second FET 102 are connected to the biasing line 703 via theresistors 202. The biasing line 703 is connected to the biasing terminal603.

Now, it will be described how the RF switching circuit of thisembodiment operates. FIGS. 10A and 10B respectively show the states of across-section taken along the line X-X in FIG. 9. FIGS. 10A and 10B showcases where the second FET 102 is OFF and ON, respectively. In thisembodiment, it is assumed that a high-level voltage applied to the gatesto turn the first and second FETs 101 and 102 ON is 3 V, which is equalto a power supply voltage, and a low-level voltage applied to the gatesto turn these FETs OFF is 0 V, which is equal to a ground voltage.

In a case where a signal input to the second input/output terminal 502is output from the first input/output terminal 501, 3 V is applied tothe first control terminal 601 and 0 V is applied to the second controlterminal 602. In this manner, 3 V is applied to the first through thirdgates 51A through 51C of the first FET 101, so that the first FET 101 isturned ON. On the other hand, 0 V is applied to the first through thirdgates 52A through 52C of the second FET 102, so that the second FET 102is turned OFF.

In this case, when 3 V is also applied to the biasing terminal 603, aforward bias voltage is applied to the first and second biasing gates62A and 62B of the second FET 102 in the OFF state and a forward currentflows. This makes the first through third gates 52A through 52C of thesecond FET 102 reverse biased, so that sufficient depletion layers 18are formed in parts of the second active layer 22 under the respectivefirst through third gates 52A through 52C as shown in FIG. 10A.Accordingly, depletion-layer capacitances C1 through C6 are equalized,so that an RF voltage applied to the second FET 102 is equally dividedamong the gates. As a result, high isolation and low distortion aremaintained even when the input power is higher than that in aconventional multi-gate FET.

On the other hand, when 0 V is applied to the first control terminal 601and 3 V is applied to the second control terminal 602 to turn the secondFET 102 ON, 3 V is applied to all the first through third gates 52Athrough 52C and the first and second biasing gates 62A and 62B, so thata normal ON state is implemented as shown in FIG. 10B.

In this embodiment, 3 V, which is the high-level voltage, is applied tothe biasing terminal 603. Alternatively, a voltage equal to or higherthan 80% of the high-level voltage may be applied. In this case, thegates are also reverse biased, and the same advantages are obtained.

Modified Example 1 of Embodiment 2

Hereinafter, a first modified example of the second embodiment will bedescribed with reference to the drawings. FIG. 11 illustrates anequivalent circuit of an RF switching circuit according to this modifiedexample. In FIG. 11, components already shown in FIG. 8 are denoted bythe same reference numerals, and thus descriptions thereof will beomitted.

In this modified example, a biasing line 703 is connected to a firstinput/output terminal 501 via a resistor 203 as shown in FIG. 11.

In the SPDT RF switching circuit including a first FET 101 and a secondFET 102 connected to each other, a DC voltage at the input/outputterminal 501 as a node at which the first FET 101 and the second FET 102are connected together is approximately equal to the higher one ofvoltages applied to a first control terminal 601 and a second controlterminal 602. During operation of the RF switching circuit, one of thefirst FET 101 and the second FET 102 is always ON. Accordingly, 3 V isalways applied to one of the first control terminal 601 and the secondcontrol terminal 602, so that a DC voltage at the first input/outputterminal 501 is always approximately equal to 3 V.

Accordingly, a voltage approximately equal to 3V, which is thehigh-level voltage, is always applied to a first biasing gate 61A and asecond biasing gate 61B of the first FET 101 and a first biasing gate62A and a second biasing gate 62B of the second FET 102 connected to thefirst input/output terminal 501.

In this manner, a forward bias voltage is applied to the first andsecond biasing gates 62A and 62B of the second FET 102 in the OFF state,and a forward current flows. Accordingly, first through third gates 52Athrough 52C of the second FET 102 are reverse biased, so that sufficientdepletion layers 18 are formed in parts of the second active layer 22under the respective first through third gates 52A through 52C. Thisequalizes all depletion-layer capacitances C1 through C6, and an RFvoltage applied to the second FET 102 is equally divided among thegates. As a result, high isolation and low distortion are maintainedeven when the input power is higher than that in a conventionalmulti-gate FET.

On the other hand, since 3 V is applied to first through third gates 51Athrough 51C and the first and second biasing gates 61A and 61B of thefirst FET 101 in the ON state, a normal ON state is implemented.

With this configuration, a power supply for biasing does not need to beprovided outside the circuit, so that it is possible to reduce the sizeof the device.

Modified Example 2 of Embodiment 2

Hereinafter, a second modified example of the second embodiment will bedescribed with reference to the drawings. FIG. 12 illustrates anequivalent circuit of an RF switching circuit according to this modifiedexample. In FIG. 12, components already shown in FIG. 8 are denoted bythe same reference numerals, and thus descriptions thereof will beomitted.

As shown in FIG. 12, in this modified example, a level shift circuit 131is connected to a biasing line 703. The level shift circuit 131includes: level shift diodes 151 and 152; and bias voltage adjustingresistors 204 and 205. The cathodes of the level shift diodes 151 and152 and one of the terminals of each of the bias voltage adjustingresistors 204 and 205 are connected to the biasing line 703. The anodeof the level shift diode 151 and the other terminal of the bias voltageadjusting resistor 205 are connected to a first control line 701. Theanode of the level shift diode 152 and the other terminal of the biasvoltage adjusting resistor 204 are connected to a second control line702.

Now, a semiconductor device according to this modified example in whichthe RF switching circuit is integrated will be described. FIG. 13 is aplan view illustrating a configuration of a semiconductor substrate onwhich the RF switching circuit of this modified example is integrated.In FIG. 13, components already shown in FIG. 9 are denoted by the samereference numerals, and descriptions thereof will be omitted.

As shown in FIG. 13, the level shift circuit 131 is formed in a regionadjacent to the biasing line 703 on the surface of a semiconductorsubstrate 90. The level shift circuit 131 includes the level shiftdiodes 151 and 152. The cathode of the level shift diode 151 isconnected to the biasing line 703 and is also connected to the secondcontrol line 702 via the bias voltage adjusting resistor 204. The anodeof the level shift diode 151 is connected to the first control line 701.On the other hand, the cathode of the level shift diode 152 is connectedto the biasing line 703 and is also connected to the first control line701 via the bias voltage adjusting resistor 205. The anode of the levelshift diode 152 is connected to the second control line 702.

Now, it will be described how the RF switching circuit of this modifiedexample operates in a case where an RF signal input to a secondinput/output terminal 502 is output from a first input/output terminal501. FIGS. 14A and 14B respectively show the states of a cross-sectiontaken along the line XIV-XIV in FIG. 13. FIGS. 14A and 14B show caseswhere the second FET 102 is OFF and ON, respectively.

In this modified example, it is assumed that a high-level voltageapplied to the gates to turn the first and second FETs 101 and 102 ON is3 V, which is equal to a power supply voltage, and a low-level voltageapplied to the gates to turn these FETs OFF is 0 V, which is equal to aground voltage. The forward turn-on voltages of the level shift diodes151 and 152 are 0.5 V.

On this assumption, when 3 V is applied to a first control terminal 601and 0 V is applied to a second control terminal 602 to turn the secondFET 102 OFF, 0V is applied to first through third gates 52A through 52Cof the second FET 102 and 2.5 V, which is the difference between 3 Vapplied to the first control terminal 601 and the forward turn-onvoltage of 0.5 V of the level shift diode 151, is applied to first andsecond biasing gates 62A and 62B of the second FET 102.

Accordingly, the first through third gates 52A through 52C of the secondFET 102 are reverse biased, so that depletion layers 18 expand under thefirst through third gates 52A through 52C as shown in FIG. 14A. As aresult, the isolation is enhanced and the harmonic distortion isreduced.

On the other hand, when 0 V is applied to the first control terminal 601and 3 V is applied to the second control terminal 602 to turn the secondFET 102 ON, 3 V is applied to the first through third gates 52A through52C of the second FET 102 and 2.5 V, which is the difference between 3 Vapplied to the second control terminal 602 and the forward turn-onvoltage of 0.5 V of the level shift diode 152, is applied to the firstand second biasing gates 62A and 62B of the second FET 102.

In this manner, the voltage applied to the first and second biasinggates 62A and 62B of the second FET 102 is slightly lower than 3 V,which is the high-level voltage, so that the first through third gates52A through 52C of the second FET 102 are forward biased. Accordingly,no depletion layers are formed under the first through third gates 52Athrough 52C as shown in FIG. 14B, thus reducing the ON resistance.

In this modified example, diodes whose forward turn-on voltages are 0.5V are used as the level shift diodes 151 and 152. Alternatively, diodesincluding biasing gates to which a voltage in the range from 80% to 90%,both inclusive, of the high-level voltage are allowed to be applied maybe used.

Embodiment 3

Hereinafter, a third embodiment of the present invention will bedescribed with reference to the drawings. FIG. 15 illustrates anequivalent circuit of an RF switching circuit according to thisembodiment. In FIG. 15, components already shown in FIG. 12 are denotedby the same reference numerals, and descriptions thereof will beomitted.

As shown in FIG. 15, in this embodiment, a shunt circuit 161 including athird FET 103 having three gates and two biasing gates and a shuntcircuit 162 including a fourth FET 104 having three gates and twobiasing gates are provided between a second input/output terminal 502and a ground and between a third input/output terminal 503 and a ground,respectively.

The third FET 103 has first through third gates 53A through 53C that areconnected to a second control line 702 via respective resistors 201. Thefourth FET 104 has first through third gates 54A through 54C that areconnected to a first control line 701 via respective resistors 201. Thethird FET 103 has a first biasing gate 63A and a second biasing gate63B. The fourth FET 104 has a first biasing gate 64A and a secondbiasing gate 64B. The first and second biasing gates 63A and 63B and thefirst and second biasing gates 64A and 64B are connected to a biasingline 703 via respective resistors 202.

The drains of the third FET 103 and the fourth FET 104 are grounded viarespective capacitors 801 so as to allow the second input/outputterminal 502 and the third input/output terminal 503 to be grounded withrespect to an RF signal.

Now, it will be described how the RF switching circuit of thisembodiment operates in a case where an RF signal input to the secondinput/output terminal 502 is output from the first input/output terminal501. In this embodiment, it is assumed that a high-level voltage appliedto the gates to turn the first through fourth FETs 101 through 104 ON is3 V, which is equal to a power supply voltage, and a low-level voltageapplied to the gates to turn these FETs OFF is 0 V, which is equal to aground voltage.

In the case where a signal input to the second input/output terminal 502is output from the first input/output terminal 501, 3 V is applied tothe first control terminal 601 and 0 V is applied to the second controlterminal 602. Accordingly, 3 V is applied to the first through thirdgates 51A through 51C of the first FET 101 and the first through thirdgates 54A through 54C of the fourth FET 104 and 0 V is applied to thefirst through third gates 52A through 52C of the second FET 102 and thefirst through third gates 53A through 53C of the third FET 103.

In addition, 2.5 V, which is the difference between 3 V applied to thefirst control terminal 601 and a turn-on voltage of 0.5 V of a levelshift diode 151, is applied to the biasing line 703, so that 2.5 V isapplied to first and second biasing gates 61A and 61B of the first FET101, first and second biasing gates 62A and 62B of the second FET 102,the first and second biasing gates 63A and 63B of the third FET 103, andthe first and second biasing gates 64A and 64B of the fourth FET 104.

This shows that the insertion loss in the first FET 101 and the fourthFET 104 in ON states is reduced, the isolation in the second FET 102 andthe third FET 103 in OFF states is enhanced and the distortion in thesecond FET 102 and the third FET 103 in the OFF states is reduced.

In addition, since the third input/output terminal 503 is grounded withrespect to an RF signal by the shunt circuit 162, the isolation betweenthe first input/output terminal 501 and the third input/output terminal503 is further enhanced.

In this embodiment, the RF switching circuit of the second modifiedexample of the second embodiment is combined with the shunt circuits.Alternatively, the RF switching circuit of the second embodiment or thefirst modified example of the second embodiment may be combined with theshunt circuits.

In the first through third embodiments and their modified examples,descriptions have been given on the case where an RF signal input to thesecond input/output terminal 502 is output from the first input/outputterminal 501. However, the same advantages are also obtained in a casewhere an RF signal input to the third input/output terminal 503 isoutput from the first input/output terminal 501. The same holds true fora case where input and output are replaced with each other. In theforegoing embodiments and modified examples, multi-gate FETs each havingthree gates are used. Alternatively, the same advantages are obtained aslong as a multi-gate FET having two or more gates is used.

Embodiment 4

Hereinafter, a fourth embodiment of the present invention will bedescribed with reference to the drawings. FIG. 16 is a block diagramillustrating a semiconductor device including an RF switching circuitaccording to this embodiment. As shown in FIG. 16, a semiconductordevice 1004 includes an RF switching circuit 1001 according to thesecond modified example of the second embodiment and an RF amplifier1002. The RF switching circuit 1001 and the RF amplifier 1002 areconnected to each other via a matching circuit 1003. The RF switchingcircuit 1001 is connected to an antenna terminal 1014, an outputterminal 1016, a first control terminal 1017 and a second controlterminal 1018. The RF amplifier 1002 is connected to an input terminal1015. The antenna terminal 1014 is connected to an antenna 1020.

Now, operation of the semiconductor device of this embodiment will bedescribed. At transmission, a high-level voltage is applied to the firstcontrol terminal 1017 and a low-level voltage is applied to the secondcontrol terminal 1018. This makes the antenna terminal 1014 and theinput terminal 1015 conducting with respect to an RF signal and isolatesthe antenna terminal 1014 and the output terminal 1016 from each otherwith respect to an RF signal. Accordingly, an RF signal input from theinput terminal 1015 is amplified by the RF amplifier 1002 and outputfrom the antenna 1020 by way of the matching circuit 1003 and the RFswitching circuit 1001.

At reception, the low-level voltage is applied to the first controlterminal 1017 and the high-level voltage is applied to the secondcontrol terminal 1018 in the manner opposite to that at transmission, sothat an RF signal input to the antenna 1020 is output from the outputterminal 1015 by way of the RF switching circuit 1001.

In this manner, the RF switching circuit of the present inventionexhibiting excellent isolation, the matching circuit and the RFamplifier are provided in the same semiconductor device, so that asemiconductor device for RF signals having a small size and exhibitingexcellent isolation between a transmission circuit and a receptioncircuit is obtained. In addition, a loss in a connection part isreduced, so that the power efficiency of the RF amplifier is improved,resulting in achievement of an RF circuit with low power consumption.

In this embodiment, the RF switching circuit of the second modifiedexample of the second embodiment is used. However, the same advantagesare obtained when the RF switching circuits of the other embodiments andmodified examples are used.

In the foregoing embodiments and modified examples, a power supplyvoltage is used as a high-level voltage and a ground voltage is used asa low level voltage. However, the high-level voltage only needs to be avoltage enough to turn a FET ON, and the low-level voltage only needs tobe a voltage enough to turn a FET OFF.

As described above, with the switching circuits and semiconductordevices according to the present invention, isolation does notdeteriorate and harmonic distortion does not increase with respect to anRF signal and an RF switching circuit having a small insertion loss inan ON state is achieved even when a multi-gate FET is used. Accordingly,these switching circuits and semiconductor devices are effective asthose for switching signals in mobile communication equipment, forexample.

1-2. (canceled)
 3. An RF switching circuit, comprising: a plurality ofinput/output terminals for inputting and outputting an RF signal; aswitch for opening and closing an electrical connection between theinput/output terminals, and a control line, wherein the switch isconstituted by a multi-gate field effect transistor including aplurality of gates located between source and drain spaced from eachother on a semiconductor layer, a bias voltage is applied to aninter-gate region of the semiconductor layer between the gates, and thebias voltage is equal to or lower than 90% of a high-level voltage,which is a voltage for turning the multi-gate field effect transistorON, in a state where the multi-gate field effect transistor is ON, andis equal to or higher than 80% of the high-level voltage and equal to orlower than the high-level voltage in a state where the multi-gate fieldeffect transistor is OFF; and said RF switching circuit furthercomprising a diode provided between the control line and the inter-gateregion, the diode having a cathode connected to the inter-gate region.4. The RF switching circuit of claim 3, wherein the number of saidinput/output terminals is three, the RF switching circuit is an SPDT RFswitching circuit including two said multi-gate field effect transistorseach connected between each two of the input/output terminals, and theinter-gate region of one of the multi-gate field effect transistors isconnected to the inter-gate region of the other multi-gate field effecttransistor.
 5. (canceled)
 6. An RF switching circuit, comprising: aplurality of input/output terminals for inputting and outputting an RFsignal; and a switch for opening and closing an electrical connectionbetween the input/output terminals, wherein the switch is constituted bya multi-gate field effect transistor including a plurality of gateslocated between source and drain spaced from each other on asemiconductor layer, and the multi-gate field effect transistor has abiasing gate used for applying a bias voltage and provided between thegates.
 7. The RF switching circuit of claim 6, wherein a voltage equalto or higher than 80% of a high-level voltage for turning the multi-gatefield effect transistor ON and equal to or lower than the high-levelvoltage is applied to the biasing gate.
 8. The RF switching circuit ofclaim 7, wherein a voltage equal to or lower than 90% of the high-levelvoltage is applied to the biasing gate.
 9. The RF switching circuit ofclaim 7, wherein the high-level voltage is a power supply voltage. 10.The RF switching circuit of claim 6, wherein the number of saidinput/output terminals is three, the RF switching circuit is an SPDT RFswitching circuit including two said multi-gate field effect transistorseach connected between each two of the input/output terminals, and abiasing line connecting the biasing gates of the multi-gate field effecttransistors together is further provided.
 11. The RF switching circuitof claim 10, further comprising two shunt circuits each for causing oneof the input/output terminals connected to one of the multi-gate fieldeffect transistors to be grounded with respect to an RF signal, whereineach of the shunt circuits is connected between one of the input/outputterminals and a ground and constituted by a multi-gate field effecttransistor including a biasing gate, and the multi-gate field effecttransistor constituting each of the shunt circuits is connected to thebiasing line.
 12. The RF switching circuit of claim 10, wherein avoltage equal to the high-level voltage is applied to the biasing line.13. The RF switching circuit of claim 12, wherein the high-level voltageis a power supply voltage.
 14. The RF switching circuit of claim 10,wherein the biasing line is connected to the input/output terminalsconnected to the respective multi-gate field effect transistors.
 15. TheRF switching circuit of claim 10, wherein the biasing line is providedwith a level shift circuit for generating a voltage equal to or higherthan 80% and equal to or lower than 90% of the high-level voltage. 16.The RF switching circuit of claim 15, wherein the high-level voltage isa power supply voltage.
 17. The RF switching circuit of claim 15,wherein the level shift circuit includes: two level shift diodes eachhaving an anode connected to one of a pair of control lines forcontrolling the gates of the multi-gate field effect transistors and acathode connected to the biasing line; and two bias voltage adjustingresistors each having two terminals, one of the terminals is connectedto an associated one of the control lines and the other terminal isconnected to the biasing line.
 18. (canceled)
 19. A semiconductordevice, comprising: a semiconductor substrate; and an RF switchingcircuit integrated on the semiconductor substrate, wherein the RFswitching circuit includes a plurality of input/output terminals forinputting and outputting an RF signal, and a switch for opening andclosing an electrical connection between the input/output terminals, theswitch is constituted by a multi-gate field effect transistor includinga plurality of gates located between source and drain spaced from eachother on a semiconductor layer, a bias voltage is applied to aninter-gate region of the semiconductor layer between the gates, and thebias voltage is equal to or lower than 90% of a high-level voltage,which is a voltage for turning the multi-gate field effect transistorON, in a state where the multi-gate field effect transistor is ON, andis equal to or higher than 80% of the high-level voltage and equal to orlower than the high-level voltage in a state where the multi-gate fieldeffect transistor is OFF; and the control line is connected between thegates of one of the multi-gate field effect transistors and theinter-gate region of the other multi-gate field effect transistor; saidsemiconductor device further comprising an RF amplifier for amplifyingRF power.
 20. A semiconductor device, comprising: a semiconductorsubstrate; and an RF switching circuit integrated on the semiconductorsubstrate, wherein the RF switching circuit includes a plurality ofinput/output terminals for inputting and outputting an RF signal, and aswitch for opening and closing an electrical connection between theinput/output terminals, the switch is constituted by a multi-gate fieldeffect transistor including a plurality of gates located between sourceand drain spaced from each other on a semiconductor layer, and themulti-gate field effect transistor has a biasing gate used for applyinga bias voltage and provided between the gates.
 21. The semiconductordevice of claim 20, further comprising an RF amplifier for amplifying RFpower.